Исследование допустимой импульсной мощности кремниевой p+–p–n+-структуры

• Date: 2011
• Main Authors: Karimov, A. V., Yodgorova, D. M., Abdulhaev, O. A., Karimov, A. A., Asanova, G. O.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2011
• Subjects: импульсная мощность; температура перехода; тепловое сопротивление; толщина базы
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.6.43
• Journal Title: Technology and design in electronic equipment

The conducted researches of the thermal parameters of the silicon p+–p–n+-structure under the influence of the pulse signal have shown that the structure thermal resistance decreases in proportion to the decrease in the thickness of the base region and the dependence of the superheating...