Разработка конструкции и технологии изготовления комплементарных транзисторов для радиационно стойких ИС
The construction of vertical complementary transistors with the full dielectric isolation is developed, new technological processes of creation on their basis the radiation tolerant integrated circuits with parameters which provide low values of a leakage current along with the considerable values o...
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| Datum: | 2011 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2011
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.3.23 |
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| Назва журналу: | Technology and design in electronic equipment |