Разработка конструкции и технологии изготовления комплементарных транзисторов для ра­диа­ци­он­но стойких ИС

• Date: 2011
• Main Authors: Gorban, A. N., Kravchina, V. V.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2011
• Subjects: комплементарные транзисторы; диэлектрическая изоляция; vтехнологические процессы; радиационно стойкие ИС
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.3.23
• Journal Title: Technology and design in electronic equipment

The construction of vertical complementary transistors with the full dielectric isolation is developed, new technological processes of creation on their basis the radiation tolerant integrated circuits with parameters which provide low values of a leakage current along with the considerable values o...