Режим работы двухкаскадного термоэлектрического охлаждающего устройства, обе­с­пе­чи­ва­ю­щий минимальную интенсивность отказов

Режим работы двухкаскадного термоэлектрического охлаждающего устройства, обе­с­пе­чи­ва­ю­щий минимальную интенсивность отказов

Results of experimental and theoretical study of RF CCP reactor for reactive ion etching of semiconductors are presented. Breakdown curve and domain of the discharge existence are measured in various gases (argon, fluorocarbon, oxygen). The dependences of the DC self bias potential on the RF voltage...

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Bibliographische Detailangaben
Datum:2011
Hauptverfasser: Dudin, S. V., Lisovskiy, V. А., Dahov, A. N., Pletniov, V. M.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2011
Schlagworte:
ВЧ емкостный разряд
пла­з­мо­хи­ми­ческое травление полупроводниковых материалов
пла­з­мо­хи­ми­чес­кий реактор
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2011.1-2.42
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
Beschreibung
Zusammenfassung:Results of experimental and theoretical study of RF CCP reactor for reactive ion etching of semiconductors are presented. Breakdown curve and domain of the discharge existence are measured in various gases (argon, fluorocarbon, oxygen). The dependences of the DC self bias potential on the RF voltage applied to the electrode have been found. The radial profiles of the ion current density to the processed surface and their behaviour with the discharge parameters change are presented for various gases. The experimental data are compared to the numerical simulation results obtained using the OOPIC code.

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