Физико-технологические аспекты создания низковольтных ограничителей напряжения на основе кремния
It is shown that by arsenic diffusion alloying of silicon plates in conditions of deaerated quartz ampoule the most effective is the use of a compound source in the form of crystal arsenic and silicon powder of boron-implanted silicon grade with base impurity (boron) concentration not less than the...
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| Date: | 2010 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2010
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.5-6.30 |
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| Journal Title: | Technology and design in electronic equipment |