Физико-технологические аспекты создания низковольтных ограничителей напряжения на основе кремния

It is shown that by arsenic diffusion alloying of silicon plates in conditions of deaerated quartz ampoule the most effective is the use of a compound source in the form of crystal arsenic and silicon powder of boron-implanted silicon grade with base impurity (boron) concentration not less than the...

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Bibliographische Detailangaben
Datum:2010
Hauptverfasser: Rakhmatov, A. Z., Skorniakov, S. L., Karimov, A. V., Yodgorova, D. M., Abdulkhayev, O. A., Buzrukov, U. M.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2010
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Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.5-6.30
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment