Диагностика глубоких центров на границе пленка–подложка в тонкопленочных эпи­так­си­аль­ных структурах GaAs

Диагностика глубоких центров на границе пленка–подложка в тонкопленочных эпи­так­си­аль­ных структурах GaAs

A simple method for the determination of the concentration of vacant deep traps in the vicinity of the «film — substrate» interface is proposed. The method is based on determining the increase in the width of the conducting channel under extrinsic illumination from the shift of the inflection point...

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Bibliographic Details
Date:2010
Main Authors: Gorev, N. B., Kodzhespirova, I. F., Privalov, E. N.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2010
Subjects:
арсенид галлия
эпитаксиальная структура
барьер Шоттки
вольт-фарадная характеристика
глубокие центры
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.4.53
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:A simple method for the determination of the concentration of vacant deep traps in the vicinity of the «film — substrate» interface is proposed. The method is based on determining the increase in the width of the conducting channel under extrinsic illumination from the shift of the inflection point in the capacitance-voltage curve. The reliability of the method is confirmed by measurement of the concentration of vacant deep traps in GaAs wafers with and without a buffer layer.

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