Получение активных слоев InP в составе гетероструктур для диодов Ганна

• Date: 2010
• Main Authors: Vakiv, M. M., Krukovskiy, S. I., Zayachuk, D. M., Mykhashchuk, Iu. S., Krukovskiy, R. S.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2010
• Subjects: эпитаксиальный слой; жидкофазная эпитаксия; редкоземельный элемент; изовалентный элемент; ле­ги­ро­вание
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.3.50
• Journal Title: Technology and design in electronic equipment

It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and leads to growth of its structural perfection. The...