Получение арсенид-галлиевых структур силовых биполярных и полевых транзисторов методом газофазной эпитаксии
Investigation results in technology of doping Sn and Bi of perfect GaAs structures preparation by the lowe-temperature isothermal chloride epitaxy method are presented. A complex problem has been solved to obtain planar layers of the n+–n–n0–p type bipolar transistors and planar la...
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| Datum: | 2010 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2010
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.2.31 |
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| Назва журналу: | Technology and design in electronic equipment |