Фотоэлектростимулированная пассивация спектрометрических Cd1–xZnxTe-детекторов
A new physical method of Cd1–xZnxTe-detector’s treatment – photoelectrostimulated passivation is developed. In its frames, oxidation of the sample followed by the formation of high-resistance oxide layer on the surface occurs at simultaneous action of both intense light radiation and electric field....
Збережено в:
| Дата: | 2010 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2010
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.2.56 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | A new physical method of Cd1–xZnxTe-detector’s treatment – photoelectrostimulated passivation is developed. In its frames, oxidation of the sample followed by the formation of high-resistance oxide layer on the surface occurs at simultaneous action of both intense light radiation and electric field. It is shown that the method is easily realized and provides the obtaining of thick high-resistance oxide films, that essentially increases the surface electrical resistance of Cd1–xZnxTe-samples and diminishes leakage currents in them. |
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