Исследование влияния электронного облучения на кремниевые тензорезисторы

• Дата: 2010
• Автори: Druzhinin, A. A., Maryamova, I. I., Kutrakov, A. P., Liakh-Kaguj, N. S., Masluk, V. T., Mehela, I. G.
• Формат: Стаття
• Мова: Ukrainian
• Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2010
• Теми: кремний; тензорезистор; электронное облучение
• Онлайн доступ: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.1.26
• Назва журналу: Technology and design in electronic equipment

The characteristics of semiconductor strain gauges based on boron doped р-type silicon whiskers under high energy electron irradiation were studied. Strain gauges were irradiated at room temperature by electrons with energies 4,2–14 MeV and different doses 5·1016–1·1018 el/cm2. The...