Исследование влияния электронного облучения на кремниевые тензорезисторы

Исследование влияния электронного облучения на кремниевые тензорезисторы

The characteristics of semiconductor strain gauges based on boron doped р-type silicon whiskers under high energy electron irradiation were studied. Strain gauges were irradiated at room temperature by electrons with energies 4,2–14 MeV and different doses 5·1016–1·1018 el/cm2. The...

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Bibliographic Details
Date:2010
Main Authors: Druzhinin, A. A., Maryamova, I. I., Kutrakov, A. P., Liakh-Kaguj, N. S., Masluk, V. T., Mehela, I. G.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2010
Subjects:
кремний
тензорезистор
электронное облучение
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.1.26
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment

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https://www.tkea.com.ua/index.php/journal/article/view/TKEA2010.1.26

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