Влияние термического окисления на ани­зо­тро­пию элек­тро­про­вод­нос­ти и фо­то­про­во­ди­мос­ти на­но­струк­ту­ри­ро­ван­но­го крем­ния

Влияние термического окисления на ани­зо­тро­пию элек­тро­про­вод­нос­ти и фо­то­про­во­ди­мос­ти на­но­струк­ту­ри­ро­ван­но­го крем­ния

An effect of thermal oxidation on the conductivity of porous silicon layers prepared by electrochemical etching of single-crystal silicon wafers with (110) orientation of the surface are investigated. The thermal oxidation is found to influence on the conductivity of porous silicon measured along va...

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Bibliographische Detailangaben
Datum:2009
Hauptverfasser: Forsh, P. A., Forsh, Е. А., Martyshov, M. N., Timoshenko, V. Yu., Kashkarov, P. K.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2009
Schlagworte:
пористый кремний
электропроводность
анизотропия
термическое окисление
потенциальные барьеры
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.6.35
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Zusammenfassung:An effect of thermal oxidation on the conductivity of porous silicon layers prepared by electrochemical etching of single-crystal silicon wafers with (110) orientation of the surface are investigated. The thermal oxidation is found to influence on the conductivity of porous silicon measured along various crystal directions in different ways. The obtained results are explained by the model of charge carriers transfer considering the presence of potential barriers on the boundaries of connecting silicon nanocrystals.

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