Разработка схемы и топологии элементов матрицы управляемых автоэмиссионных кремниевых микрокатодов

Examples of device elements for microsystems, developed on local three-dimensional structure, are shown. The application area of compact EKV models of the MOS-transistor for calculation of SOI MOS-transistors characteristics has been established. The calculated and experimental output characteristic...

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Bibliographic Details
Date:2009
Main Authors: Druzhinin, А. A., Holota, V. I., Kogut, I. T., Khoverko, Ju. M.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2009
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Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.20
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment