Разработка схемы и топологии элементов матрицы управляемых автоэмиссионных кремниевых микрокатодов
Examples of device elements for microsystems, developed on local three-dimensional structure, are shown. The application area of compact EKV models of the MOS-transistor for calculation of SOI MOS-transistors characteristics has been established. The calculated and experimental output characteristic...
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| Date: | 2009 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2009
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.20 |
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| Journal Title: | Technology and design in electronic equipment |