Фотоприемники ультрафиолетового излучения на основе тонких пленок ZnS
High efficient photodiodes on the base of р-Cu1,8S/n-ZnS/(ZnS)х(CdSe)1–х/CdSe/Mo-structure with variband interlayer were fabricated. Optimization of this layer thickness was shown to be efficient method of reduction of photosensitivity behind UV region while preserving one in UV region....
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| Date: | 2009 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2009
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.29 |
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| Journal Title: | Technology and design in electronic equipment |