Фотоприемники ультрафиолетового излучения на основе тонких пленок ZnS

High efficient photodiodes on the base of р-Cu1,8S/n-ZnS/(ZnS)х(CdSe)1–х/CdSe/Mo-structure with variband interlayer were fabricated. Optimization of this layer thickness was shown to be efficient method of reduction of photosensitivity behind UV region while preserving one in UV region....

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Bibliographische Detailangaben
Datum:2009
Hauptverfasser: Bobrenko, Yu. N., Yaroshenko, N. V., Sheremetova, G. I., Semikina, T. V., Atdaev, B. S.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2009
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Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.29
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment