Корреляция параметров арсенид-галлиевых эпитаксиальных слоев и технологии их выращивания
The correlation between mobility and carriers concentration and growth’s conditions of gallium arsenic layers by liquid phase epitaxy is established. It is possible to obtain layers with required mobility and concentration of charge carriers by changing of technology parameters of growth’s process....
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| Datum: | 2009 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2009
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.38 |
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| Назва журналу: | Technology and design in electronic equipment |