Формирование мезаструктур 4НSiC p–i–n-диодов методом ионно-плазменного травления
The results of research and optimization of 4НSiC p–i–n-diodes mesastructures manufacturing method are presented, as well as analysis of current-voltage characteristics and switching characteristics of p–i–n-diodes in the 25—500°C temperature range.
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| Datum: | 2009 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2009
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.5.45 |
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| Назва журналу: | Technology and design in electronic equipment |