Мо­дель ли­нии пе­ре­да­чи для на­но­элек­тро­ни­ки

Мо­дель ли­нии пе­ре­да­чи для на­но­элек­тро­ни­ки

Analytical expressions for resonant parameters and characteristics of typical barrier nanoelectronic structures have been received on the basis of the transmission line model. Characteristics illustrating the efficiency of such approach are presented in the article.

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Bibliographische Detailangaben
Datum:2009
1. Verfasser: Nelin, E. A.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2009
Schlagworte:
наноэлектроника
резонансное туннелирование электронов
кристаллоподобные структуры
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.4.30
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Zusammenfassung:Analytical expressions for resonant parameters and characteristics of typical barrier nanoelectronic structures have been received on the basis of the transmission line model. Characteristics illustrating the efficiency of such approach are presented in the article.

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