Мо­дель ли­нии пе­ре­да­чи для на­но­элек­тро­ни­ки

• Datum: 2009
• 1. Verfasser: Nelin, E. A.
• Format: Artikel
• Sprache: Ukrainian
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2009
• Schlagworte: наноэлектроника; резонансное туннелирование электронов; кристаллоподобные структуры
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.4.30
• Назва журналу: Technology and design in electronic equipment

Analytical expressions for resonant parameters and characteristics of typical barrier nanoelectronic structures have been received on the basis of the transmission line model. Characteristics illustrating the efficiency of such approach are presented in the article.