Об­ъем­ные оп­ти­че­ские по­кры­тия из ха­ль­ко­ге­ни­д­ных сте­кол для по­лу­про­во­д­ни­ко­вых ис­то­ч­ни­ков ИК-из­лу­че­ния

Об­ъем­ные оп­ти­че­ские по­кры­тия из ха­ль­ко­ге­ни­д­ных сте­кол для по­лу­про­во­д­ни­ко­вых ис­то­ч­ни­ков ИК-из­лу­че­ния

The article demonstrates the possibility of using the multi component chalcogenide glasses Ge(Pb)–Sb(Ga)–S(Se) as dielectric materials for optical covering of semiconductor radiating active elements which function in the spectral diapason 2,5—5,0 mkm. An effective way to put optical covering of vari...

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Bibliographic Details
Date:2009
Main Author: Kabatsiy, V. М.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2009
Subjects:
полупроводниковые источники ИК–излучения
излучающие активные элементы
халькогенидные сте­к­ла
на­не­се­ние оптических покрытий
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.4.38
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The article demonstrates the possibility of using the multi component chalcogenide glasses Ge(Pb)–Sb(Ga)–S(Se) as dielectric materials for optical covering of semiconductor radiating active elements which function in the spectral diapason 2,5—5,0 mkm. An effective way to put optical covering of various shapes has been developed. It is possible to narrow the diagram of direction along the radiating axis of the active elements to 15° and increase three or four times the capacity of its radiation.

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