Вли­я­ние об­лу­че­ния кре­м­ния ни­з­ко­энер­ге­ти­че­ски­ми ио­на­ми ар­го­на на об­ра­зо­ва­ние в нем элек­три­че­ски ак­тив­ных де­фек­тов

Вли­я­ние об­лу­че­ния кре­м­ния ни­з­ко­энер­ге­ти­че­ски­ми ио­на­ми ар­го­на на об­ра­зо­ва­ние в нем элек­три­че­ски ак­тив­ных де­фек­тов

The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etch...

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Bibliographische Detailangaben
Datum:2009
Hauptverfasser: Popov, V. M., Shustov, Yu. M., Klimenko, A. S., Pokanevich, A. P.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2009
Schlagworte:
электрически активные дефекты
кремний
облучение ионами
растровая электронная микроскопия
фо­то­чув­ст­ви­тельность
диоды Шоттки
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.4.48
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Zusammenfassung:The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etching of silicon by low-energy ions was shown to be an effective tool for task — oriented modification of electrophysical properties of semiconductor surface.

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