Влияние облучения кремния низкоэнергетическими ионами аргона на образование в нем электрически активных дефектов
The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etch...
Збережено в:
| Дата: | 2009 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2009
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.4.48 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etching of silicon by low-energy ions was shown to be an effective tool for task — oriented modification of electrophysical properties of semiconductor surface. |
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