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Вли­я­ние об­лу­че­ния кре­м­ния ни­з­ко­энер­ге­ти­че­ски­ми ио­на­ми ар­го­на на об­ра­зо­ва­ние в нем элек­три­че­ски ак­тив­ных де­фек­тов

The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etch...

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Bibliographic Details
Date:2009
Main Authors: Popov, V. M., Shustov, Yu. M., Klimenko, A. S., Pokanevich, A. P.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2009
Subjects:
электрически активные дефекты
кремний
облучение ионами
растровая электронная микроскопия
фо­то­чув­ст­ви­тельность
диоды Шоттки
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.4.48
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etching of silicon by low-energy ions was shown to be an effective tool for task — oriented modification of electrophysical properties of semiconductor surface.

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