Формирование МОП-транзисторов с изоляцией активных элементов окисленным пористым кремнием

• Date: 2009
• Main Authors: Novosyadlyi, S. P., Vivcharuk, V. M.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2009
• Subjects: микроэлектроника; пористый кремний,; эпитаксия; изоляция
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.3.35
• Journal Title: Technology and design in electronic equipment

Ultrathin functional layers of MOS transistors require high-quality isolation of active elements. A new method for forming epitaxial structures for silicon-on-insulator technology based on porous silicon is proposed. This makes it possible to form three types of transistors — bipolar, CMOS, and DMOS...