Гетероструктуры, полученные методом отжига монокристаллов InSe в парах серы
It has been established that during prolonged (120 h) thermal treatment of InSe single crystals in sulfur vapors, an InS/InSe heterostructure is formed. The investigated electrical and photoelectrical characteristics of the obtained structures demonstrated a significant superiority of the anisotype...
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| Datum: | 2009 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2009
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.1.61 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | It has been established that during prolonged (120 h) thermal treatment of InSe single crystals in sulfur vapors, an InS/InSe heterostructure is formed. The investigated electrical and photoelectrical characteristics of the obtained structures demonstrated a significant superiority of the anisotype heterostructure n-InS/p-InSe over its isotype analogue. A comparison of the spectral characteristics of n-InS/p-InSe heterostructures obtained at different annealing durations has been carried out. For the InS film, the values of interband transitions as well as the parameters of the elementary crystalline cell have been determined. |
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