Химическое осаждение из газовой фази гетеро- и наноструктур соединений III–V
The results of a phenomenological study based on the in-situ method of UV spectroscopy of the gas-phase composition in the source regions of GaAs, GaP, In, Ga, and In/Ga in a horizontal flow reactor are described. The experimental results are used to analyze the growth process of GaAs:Bi, GaAs1–хPх,...
Saved in:
| Date: | 2008 |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2008
|
| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.5.36 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipment| Summary: | The results of a phenomenological study based on the in-situ method of UV spectroscopy of the gas-phase composition in the source regions of GaAs, GaP, In, Ga, and In/Ga in a horizontal flow reactor are described. The experimental results are used to analyze the growth process of GaAs:Bi, GaAs1–хPх, In1–хGaхAs, InхGa1–хAsуP1–у layers by a low-temperature isothermal gas-transport chloride epitaxy method. The obtained data make it possible to determine the temperature and the range of carrier gas (H₂) flow rates required to form a supersaturated gas phase during low-temperature growth of hetero- and nanostructures based on GaAs, GaAs1–хPх, In1–хGaхAs, InхGa1–хAsуP1–у layers. |
|---|