Химическое осаждение из газовой фази гетеро- и наноструктур соединений III–V

• Date: 2008
• Main Authors: Voronin, V. A., Guba, S. K., Kurilo, I. V.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2008
• Subjects: хлорид-гидридная эпитаксия; гетероструктура; наноструктура; соединения III–V; прямоточный горизонтальный реактор
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.5.36
• Journal Title: Technology and design in electronic equipment

The results of a phenomenological study based on the in-situ method of UV spectroscopy of the gas-phase composition in the source regions of GaAs, GaP, In, Ga, and In/Ga in a horizontal flow reactor are described. The experimental results are used to analyze the growth process of GaAs:Bi, GaAs1–хPх,...