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Приборно-технологическое моделирование автоэмиссионных кремниевых микрокатодов

A structure of a system for converting topological information for digital lithography is proposed. A method for forming local three-dimensional SOI (Silicon-on-Insulator) structures has been developed, which makes it possible to create both planar and three-dimensional device elements and contacts....

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Bibliographic Details
Date:2008
Main Authors: Druzhynin, А. A., Holota, V. I., Kogut, I. T., Sapon, S. V., Khoverko, Yu. M.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2008
Subjects:
цифровая литография
автоэмиссионный микрокатод
стабильная автоэмиссия
локальные структуры
“кремний-на-изоляторе”
электрическая схема
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.5.43
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:A structure of a system for converting topological information for digital lithography is proposed. A method for forming local three-dimensional SOI (Silicon-on-Insulator) structures has been developed, which makes it possible to create both planar and three-dimensional device elements and contacts. On the SOI structures, a control high-voltage MOS transistor and a memory cell with a signal shaper for storing topological information have been designed. Expert optimization of the memory cell topology has made it possible to significantly reduce its area compared to that of a cell fabricated using standard n-channel MOS technology.

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