Влияние исходных дефектов на распределение механических напряжений и деформаций при окислении кремния

Using modern methods, the complex structure of near-surface silicon layers in the “silicon — silicon dioxide” systems has been investigated. The dependencies of the parameters of these layers on oxidation conditions and the characteristics of the initial silicon have been identified. The influence o...

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Bibliographic Details
Date:2008
Main Authors: Kulinich, O. A., Smyntyna, V. A., Glauberman, M. A., Chemeresyuk, G. G., Yatsunskiy, I. R.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2008
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Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.5.62
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment

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