Вольт-фарадные характеристики ионно-имплантированных структур GaAs
A non-iterative numerical method has been proposed for calculating the dependence of the barrier capacitance of ion-implanted GaAs structures on the voltage across the Schottky barrier. The specific features of the low- and high-frequency capacitance–voltage characteristics of these structures, caus...
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| Date: | 2008 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.4.52 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | A non-iterative numerical method has been proposed for calculating the dependence of the barrier capacitance of ion-implanted GaAs structures on the voltage across the Schottky barrier. The specific features of the low- and high-frequency capacitance–voltage characteristics of these structures, caused by the presence of deep trapping centers, have been identified. |
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