Особенности формирования быстровосстанавливающихся кремниевых диодов
The dependence of the reverse recovery time (trr) on the annealing parameters of diode structures after electron irradiation with energies of 4 and 10 MeV and fluences of 6·1015 sm–2 and 8·1014 sm–2, respectively, has been investigated. Diodes with the minimum trr and maximum recovery curr...
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| Datum: | 2008 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.3.36 |
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| Назва журналу: | Technology and design in electronic equipment |