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Особенности формирования быстровосстанавливающихся кремниевых диодов

The dependence of the reverse recovery time (trr) on the annealing parameters of diode structures after electron irradiation with energies of 4 and 10 MeV and fluences of 6·1015 sm–2 and 8·1014 sm–2, respectively, has been investigated. Diodes with the minimum trr and maximum recovery curr...

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Bibliographic Details
Date:2008
Main Authors: Gorban, A. N., Kravchina, V. V., Gomolsky, D. M., Solodovnic, A. I.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2008
Subjects:
диод
облучение электронами
флюэнс
время восстановления
скорость эмиссии
энергия
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.3.36
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment

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https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.3.36

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