Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀.₂Ga₀.₈As–n⁺GaAs–n⁰Ga₀.₉In₀.₁As–Au-структуры

• Date: 2008
• Main Authors: Yodgorova, D. M., Karimov, A. V., Giyasova, F. A., Saidova, R. A.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2008
• Subjects: двухбазовая структура; токоперенос; фотовольтаический; примесный; слой объемного заряда; изотипный гетеропереход
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.3.46
• Journal Title: Technology and design in electronic equipment

The photoelectric characteristics of the fabricated double-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au structures, sensitive on both sides, have been investigated in photodiode and photovoltaic modes under irradiation determined by the intrinsic absorption region of each heterolayer. The obtaine...