Buchumschlag

Некоторые особенности фотоэлектрических характеристик двухбазовой Ag–N⁰Al₀.₂Ga₀.₈As–n⁺GaAs–n⁰Ga₀.₉In₀.₁As–Au-структуры

The photoelectric characteristics of the fabricated double-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au structures, sensitive on both sides, have been investigated in photodiode and photovoltaic modes under irradiation determined by the intrinsic absorption region of each heterolayer. The obtaine...

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Bibliographische Detailangaben
Datum:2008
Hauptverfasser: Yodgorova, D. M., Karimov, A. V., Giyasova, F. A., Saidova, R. A.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2008
Schlagworte:
двухбазовая структура
токоперенос
фотовольтаический
примесный
слой объемного заряда
изотипный гетеропереход
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.3.46
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Zusammenfassung:The photoelectric characteristics of the fabricated double-base Ag–N0Al0,2Ga0,8As–n+GaAs–n0Ga0,9In0,1As–Au structures, sensitive on both sides, have been investigated in photodiode and photovoltaic modes under irradiation determined by the intrinsic absorption region of each heterolayer. The obtained structures are of interest as noiseless photodetectors for opto- and microelectronics.

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