Аномальный фотовольтаический эффект в структуре с барьером Шоттки – Мотта
The paper presents the results of a study of a photovoltaic effect observed at room temperature, which is accompanied by a change in the sign of the photocurrent when transitioning from the region of intrinsic absorption to the impurity region within the spectral range of 0.4–2 μm in an oxygen‑doped...
Збережено в:
| Дата: | 2008 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.27 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The paper presents the results of a study of a photovoltaic effect observed at room temperature, which is accompanied by a change in the sign of the photocurrent when transitioning from the region of intrinsic absorption to the impurity region within the spectral range of 0.4–2 μm in an oxygen‑doped double‑base Ag–N0AlGaAs–n+GaAs–n0GaInAs–Au structure. Such structures are of interest for fiber‑optic systems. |
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