Методы удаления дефектов, возникающих при жидкостном травлении поверхности поликристаллического кремния
A model of defect formation in the form of spots on the surface of polycrystalline silicon during the processing of semiconductor wafers in an etchant based on hydrofluoric acid is considered, as well as a model of defect removal in chemical solutions. The influence of centrifuge rotation speed duri...
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| Date: | 2008 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2008
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.42 |
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| Journal Title: | Technology and design in electronic equipment |