Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу
The paper describes the manufacturing technology and presents the results of studies of a pCu2S–nSi heterojunction (HJ) and an HJ based on it, containing a nanocluster (NC) subsystem. It is shown that the presence of an NC subsystem at the interface between the p-type Cu2S film and the n-type Si sub...
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| Datum: | 2025 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2025
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2025.3-4.09 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The paper describes the manufacturing technology and presents the results of studies of a pCu2S–nSi heterojunction (HJ) and an HJ based on it, containing a nanocluster (NC) subsystem. It is shown that the presence of an NC subsystem at the interface between the p-type Cu2S film and the n-type Si substrate significantly increases the overall sensitivity of the samples under high illumination conditions. The operating mode of such an HJ as a highly sensitive valve photocell has been determined. It has also been demonstrated that these transitions are photoelectrically active in different spectral regions. The observed effects are extensive in nature, being largely determined by the geometry and morphology of the nanocluster centers rather than by the type of atoms from which they are formed. |
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