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Плівковий гетероперехід з нанокластерною підсистемою для фотоелементів нового типу

The paper describes the manufacturing technology and presents the results of studies of a pCu2S–nSi heterojunction (HJ) and an HJ based on it, containing a nanocluster (NC) subsystem. It is shown that the presence of an NC subsystem at the interface between the p-type Cu2S film and the n-type Si sub...

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Bibliographic Details
Published in:Технологія та конструювання в електронній апаратурі
Date:2025
Issue:3–4
Pages:9-14
ISSN:3083-6549
Author Affiliations:
  • Volodymyr Kovalchuk — Odessa Technological University IT STEP, Ukraine — ORCID: 0000-0001-7460-8092
  • Diana Popryaga — South Ukrainian National Pedagogical University named after K. D. Ushynsky, Odesа, Ukraine
  • Dmytro Dyachok — South Ukrainian National Pedagogical University named after K. D. Ushynsky, Odesа, Ukraine
Main Authors: Kovalchuk, Volodymyr, Popryaga, Diana, Dyachok, Dmytro
Format: Article
Language:English
Published: PE "Politekhperiodika", Book and Journal Publishers 2025
Subjects:
гетероперехід
плівка
нанокластер
підсистема
фотоелемент
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2025.3-4.09
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Journal Title:Technology and design in electronic equipment
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Technology and design in electronic equipment

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