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Моделювання фотодіодної структури на основі гетеропереходу ZnO/Si

In this work, a self-powered photodetector based on a bulk ZnO/Si p–n heterojunction is numerically investigated and analyzed using the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D). The energy band diagram, electron-hole generation and recombination rates, current-voltage (J–V) chara...

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Bibliographic Details
Date:2026
Main Authors: Virt, Ihor, Padalka, Ivan
Format: Article
Language:English
Published: PE "Politekhperiodika", Book and Journal Publishers 2026
Subjects:
фотоелемент
фотодетектор
числове моделювання
матеріал електронного транспорту (ЕТM)
ZnO
гетероструктура
програма SCAPS-1D
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2026.1.17
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Journal Title:Technology and design in electronic equipment
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Technology and design in electronic equipment

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https://www.tkea.com.ua/index.php/journal/article/view/TKEA2026.1.17

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