Гетеропереход на основе кристалла FeIn₂Se₄, полученного методом Бриджмена
FeIn2Se4 crystals with a layered structure and magnetic component were grown by the Bridgman method. Heterojunctions of type n-InSe–p-FeIn₂Se₄ were fabricated. From the capacitance–voltage characteristics, the potential barrier height of the heterojunctions was determined. Current–voltage character...
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| Datum: | 2007 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.43 |
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| Назва журналу: | Technology and design in electronic equipment |