Гетеропереход на основе кристалла FeIn₂Se₄, полученного методом Бриджмена

• Date: 2007
• Main Authors: Kovalyuk, Z. D., Katerynchuk, V. M., Netyaga, V. V., Zaslonkin, V. A.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2007
• Subjects: FeIn₂Se₄; InSe; гетеропереход; фотоэлектрические параметры
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.43
• Journal Title: Technology and design in electronic equipment

FeIn2Se4 crystals with a layered structure and magnetic component were grown by the Bridgman method. Heterojunctions of type n-InSe–p-FeIn₂Se₄ were fabricated. From the capacitance–voltage characteristics, the potential barrier height of the heterojunctions was determined. Current–voltage character...