Направленная кристаллизация силицидных пленок на кремниевой подложке
The processes of local nucleation and subsequent directed lateral crystallization of cobalt silicide phase on the surface of monocrystalline silicon have been investigated. The possibilities of creating self-organized submicron and nanoscale elements of silicon integrated circuits are considered.
Збережено в:
| Дата: | 2007 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.54 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The processes of local nucleation and subsequent directed lateral crystallization of cobalt silicide phase on the surface of monocrystalline silicon have been investigated. The possibilities of creating self-organized submicron and nanoscale elements of silicon integrated circuits are considered. |
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