Електричні та фотоелектричні властивості гетеропереходів MoN/p-CdTe та MoN/n-CdTe
Due to the physical properties of MoN and ITO thin films, it was decided to create MoN/p-CdTe and MoN/n-CdTe heterostructures and investigate their electrical and photoelectric properties. The method of reactive magnetron sputtering was used to create thin MoN and ITO films on single crystal CdTe su...
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| Datum: | 2021 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2021
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2021.1-2.33 |
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| Назва журналу: | Technology and design in electronic equipment |