Новые возможности фотоэлектрического метода определения высоты барьера в структурах Au–n-GaAs
Two-sided photosensitive Au–n–GaAs structures fabricated by a chemical method have been investigated. For the first time, it was found that illumination from the GaAs side increases photosensitivity in the Fowler region of the spectrum by approximately an order of magnitude. An improved variant of t...
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| Date: | 2007 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.3.33 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | Two-sided photosensitive Au–n–GaAs structures fabricated by a chemical method have been investigated. For the first time, it was found that illumination from the GaAs side increases photosensitivity in the Fowler region of the spectrum by approximately an order of magnitude. An improved variant of the photoelectric method for determining the Schottky barrier height is proposed, providing high accuracy and reliability. This makes it possible to evaluate the quality of metal–semiconductor and metal–insulator–semiconductor interfaces. The method can be applied in the development of new semiconductor electronic devices. |
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