Комбинированный способ выращивания эпитаксиальных слоев полупроводниковых соединений A³B⁵

• Date: 2007
• Main Authors: Yodgorova, D. M., Karimov, A. V., Giyasova, F. A., Saidova, R. A.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2007
• Subjects: устройство; способ; структура; режим; эпитаксия; гетерослой
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.3.56
• Journal Title: Technology and design in electronic equipment

A combined method for obtaining epitaxial layers of A3B5 semiconductor compounds is described, carried out in a single technological process by both forced cooling and isothermal mixing of solution-melts. In this process, the parameters of the grown layers are determined by the cooling regime and th...