Получение поверхностно-барьерных структур на основе четырехкомпонентных твердых растворов А4В6
Surface‑barrier structures of the type Pb/δ-layer/р-Pb0,87Sn0,13Te0,96Se0,04/р+-Pb0,8Sn0,2Te/Au. were fabricated using liquid‑phase epitaxy and thermal vacuum deposition. At a measurement temperature of 170 K, with a peak wavelength of 8.2 μm and a cutoff wavelength of 8.5 μm, they exhibited a diffe...
Збережено в:
| Дата: | 2007 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2007
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.1.42 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | Surface‑barrier structures of the type Pb/δ-layer/р-Pb0,87Sn0,13Te0,96Se0,04/р+-Pb0,8Sn0,2Te/Au. were fabricated using liquid‑phase epitaxy and thermal vacuum deposition. At a measurement temperature of 170 K, with a peak wavelength of 8.2 μm and a cutoff wavelength of 8.5 μm, they exhibited a differential resistance–area product at zero bias R0A = 0.39…0.92 Ω·cm², peak quantum efficiency of 0.33…0.42, and specific detectivity of (0.76…1.68)·1010 cm·Hz0.5/W. |
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