Buchumschlag

Получение поверхностно-барьерных структур на основе четырехкомпонентных твердых растворов А4В6

Surface‑barrier structures of the type Pb/δ-layer/р-Pb0,87Sn0,13Te0,96Se0,04/р+-Pb0,8Sn0,2Te/Au. were fabricated using liquid‑phase epitaxy and thermal vacuum deposition. At a measurement temperature of 170 K, with a peak wavelength of 8.2 μm and a cutoff wavelength of 8.5 μm, they exhibited a diffe...

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Bibliographische Detailangaben
Datum:2007
Hauptverfasser: Tkachuk, A. I., Tsarenko, O. N., Raybets, S. I., Tkachuk, I. Yu., Kovalyov, Yu. G.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2007
Schlagworte:
жидкофазная эпитаксия
поверхностно-барьерные структуры
фотовольтаический сенсор
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.1.42
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
Beschreibung
Zusammenfassung:Surface‑barrier structures of the type Pb/δ-layer/р-Pb0,87Sn0,13Te0,96Se0,04/р+-Pb0,8Sn0,2Te/Au. were fabricated using liquid‑phase epitaxy and thermal vacuum deposition. At a measurement temperature of 170 K, with a peak wavelength of 8.2 μm and a cutoff wavelength of 8.5 μm, they exhibited a differential resistance–area product at zero bias R0A = 0.39…0.92 Ω·cm², peak quantum efficiency of 0.33…0.42, and specific detectivity of (0.76…1.68)·1010 cm·Hz0.5/W.

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