Нестационарные электронные процессы в барьерных структурах и приборы на их основе
The limits of external influences and conditions (temperature, γ-irradiation) are determined under which the stability of parameters and the concentration of nickel levels are preserved, which is necessary when using nickel as an impurity in microelectronics. Methods are proposed for fabricating a s...
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| Datum: | 2006 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.6.39 |
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| Назва журналу: | Technology and design in electronic equipment |