Нестационарные электронные процессы в барьерных структурах и приборы на их основе
The limits of external influences and conditions (temperature, γ-irradiation) are determined under which the stability of parameters and the concentration of nickel levels are preserved, which is necessary when using nickel as an impurity in microelectronics. Methods are proposed for fabricating a s...
Збережено в:
| Дата: | 2006 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.6.39 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The limits of external influences and conditions (temperature, γ-irradiation) are determined under which the stability of parameters and the concentration of nickel levels are preserved, which is necessary when using nickel as an impurity in microelectronics. Methods are proposed for fabricating a semiconductor switch, a memory cell, and a diode matrix with identical parameters (by U) based on the Al–SiO2–Si–М structure. |
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